Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
V botách mu byl hic, tak je propíchl nožem. Teď na nich vydělává miliardy - iDNES.cz
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
Ge QDs in α-GeOx nano-films grown by two stage process based on Rf-magnetron sputtering | SpringerLink
Enhancing Plasmonic Spectral Tunability with Anomalous Material Dispersions Abstract
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
METAL-TEMPLATED CRYSTALLIZATION OF GERMANIUM FOR OPTOELECTRONIC APPLICATIONS A DISSERTATION SUBMITTED TO THE DEPARTMENT OF APPL
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
Growth and characterization of Ge QDs embedded in an α-GeOx (x < 0.1) matrix produced by magnetron sputtering and a post-grown annealing stage at low temperatures | SpringerLink
Buty Geox J Thymar G-B Jr J944FB-00022-C6627 r.29 12365831569 - Allegro.pl
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
PDF) High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx surface passivation
High speed and ultra-low dark current Ge vertical p-i-n photodetectors on an oxygen-annealed Ge-on-insulator platform with GeOx
